BSP129H6906XTSA1 vs BSP135H6906XTSA1 比較

詳細並排比較 BSP129H6906XTSA1 由 Infineon 與 BSP135H6906XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ 啟用中
Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ 啟用中

規格比較

參數 BSP129H6906XTSA1 BSP135H6906XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSP129H6906XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA 120 mA
Power Dissipation (PD) at TA=25C 1.8 W —
Drain-Source On-Resistance (RDS(on)) 6 Ohm (max) —
Operating Mode Normally-On (Depletion) —
Gate-Source Pinch-Off Voltage [DATA_NEEDED: VGS(off) typical value] —
封裝 PG-SOT223-4 (SOT-223) PG-SOT223-4 (SOT-223, 3+tab)
安裝類型 Surface Mount Surface Mount
腳位數 3 functional + 1 tab (4 leads) —
工作溫度範圍 [DATA_NEEDED: TJ max] -55C to +150C
ESD Protection Integrated Zener diodes on gate —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (unlimited floor life) 1 (unlimited)
Drain-Source Voltage (VDS) Max — 600 V
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
腳位數 — 4 (3 leads + drain tab)
Technology — SIPMOS (planar high-voltage)
Automotive Qualification — AEC-Q101 (per datasheets.com parametric record)
Lead-Free — Yes

資料表與資源

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