BSP89H6327XTSA1 vs BSS214NWH6327XTSA1 比較

詳細並排比較 BSP89H6327XTSA1 由 Infineon 與 BSS214NWH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 ✓ 啟用中
Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 啟用中

規格比較

參數 BSP89H6327XTSA1 BSS214NWH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET, enhancement mode —
Technology SIPMOS (planar power MOS) MOSFET (Metal Oxide)
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
工作溫度範圍 -55 °C to +150 °C (Tj) —
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
封裝 PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT323 (SOT-323-3)
安裝類型 Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) —
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSS214NWH6327XTSA1
Series — OptiMOS
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) @ 25C — 1.5 A
Rds(on) Max @ Vgs=4.5V — 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) — 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C — 500 mW
工作溫度 — -55C to +150C (junction)
Qualification — AEC-Q101 (Automotive)
Lead-Free — Yes

資料表與資源

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