BSP89H6327XTSA1 vs BSS214NWH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP89H6327XTSA1 by Infineon and BSS214NWH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP89H6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.15 |
| Transistor Type | N-Channel MOSFET, enhancement mode | β |
| Technology | SIPMOS (planar power MOS) | MOSFET (Metal Oxide) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 Β΅A) | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 0.35 A | β |
| Total Power Dissipation (Ptot) at Ta=25Β°C | 1.8 W (on FR4 PCB, 6 cmΒ² cooling area) | β |
| On-State Resistance (RDS(on)) max | 6 Ξ© (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (Tj) | β |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cmΒ² PCB) | β |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | β |
| Package | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SOT323 (SOT-323-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | β |
| dv/dt Rated | Yes | β |
| ESD Protection | Internal gate-source Zener | β |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSS214NWH6327XTSA1 |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 20 V |
| Continuous Drain Current (Id) @ 25C | β | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | β | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | β | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | β | 500 mW |
| Operating Temperature | β | -55C to +150C (junction) |
| Qualification | β | AEC-Q101 (Automotive) |
| Lead-Free | β | Yes |