BSS138NH6327XTSA2 vs 2N7002-7-F 比較

詳細並排比較 BSS138NH6327XTSA2 由 Infineon 與 2N7002-7-F 由 Diodes Incorporated. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 啟用中
Diodes Incorporated
2N7002-7-F 2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F ✓ 啟用中

規格比較

參數 BSS138NH6327XTSA2 2N7002-7-F
品牌 Infineon Diodes Incorporated
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
封裝 PG-SOT-23 (3-pin) SOT-23-3 (TO-236)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: Tj max and operating range] [DATA_NEEDED: Tj / TA operating range]
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
無鹵素 Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
電晶體類型 — N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
RoHS 狀態 — Compliant
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)
Channel Mode — Enhancement
Technology — Trench MOSFET

資料表與資源

瀏覽所有產品 建立 BOM 索取報價