BSS205NH6327XTSA1 vs BSP315PH6327XTSA1 比較

詳細並排比較 BSS205NH6327XTSA1 由 Infineon 與 BSP315PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 啟用中
Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS205NH6327XTSA1 BSP315PH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
電晶體類型 N-Channel MOSFET —
封裝 PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
安裝類型 Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
工作溫度範圍 -55 °C to +150 °C (junction) -55 C to +150 C (junction)
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
FET Type — P-Channel
Technology — OptiMOS (enhancement mode)
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -1.17 A (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Gate-Source Voltage (VGS) — ±20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

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