BSS214NH6327XTSA1 vs BSS119NH6327XTSA1 比較
詳細並排比較 BSS214NH6327XTSA1 由 Infineon 與 BSS119NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS214NH6327XTSA1 | BSS119NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | — |
| 封裝 | SOT-23 (PG-SOT23), 3 pins | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (junction) | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (automotive grade) |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 [DATA_NEEDED: confirm from datasheet] |
| ESD Protection | Yes (gate ESD diode) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Threshold Voltage (VGS(th)) | — | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Lead-Free | — | Yes |
| Packaging | — | Tape & Reel (3,000 pcs/reel) |