BSS816NWH6327XTSA1 vs BSL316CH6327XTSA1 比較
詳細並排比較 BSS816NWH6327XTSA1 由 Infineon 與 BSL316CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS816NWH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | OptiMOS small-signal complementary MOSFET |
| 電晶體類型 | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| 工作溫度範圍 | -55C to +150C | — |
| 封裝 | SOT-323 (PG-SOT323), 3-pin | PG-TSOP6-6 (TSOP6, 6-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS low-voltage MOSFET |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSL 等級 | 1 | [DATA_NEEDED: MSL level] |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| 工作溫度 | — | -55C to +150C (junction) |
| Channel Type | — | N-channel + P-channel (dual) |
| 腳位數 | — | 6 |
| RoHS 狀態 | — | Compliant |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |