BSZ036NE2LSATMA1 vs BSC034N06NSATMA1 比較
詳細並排比較 BSZ036NE2LSATMA1 由 Infineon 與 BSC034N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ036NE2LSATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | 100 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| 封裝 | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作溫度範圍 | -55C to +150C | -55C to +150C |
| MSL 等級 | 1 (Unlimited) | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |
| Technology | — | OptiMOS 5 |