BSZ036NE2LSATMA1 vs BSZ011NE2LS5IATMA1 比較
詳細並排比較 BSZ036NE2LSATMA1 由 Infineon 與 BSZ011NE2LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ036NE2LSATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| 封裝 | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作溫度範圍 | -55C to +150C | -55°C to +150°C |
| MSL 等級 | 1 (Unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (Trench) |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| 無鹵素 | — | Yes |