BTS621L1E3128ABUMA1 vs ITS716GFUMA1 比較

詳細並排比較 BTS621L1E3128ABUMA1 由 Infineon 與 ITS716GFUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BTS621L1E3128ABUMA1 ITS716GFUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 4
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
工作溫度範圍 -40 °C to +150 °C junction -40 C to +85 C (industrial grade)
封裝 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-20-32 (20-pin SOIC, exposed pad)
安裝類型 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Yes - open-load and overtemperature reporting —
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
輸出配置 — High-side (N-Channel MOSFET)
Continuous Current per Channel — 2.3 A
On-State Resistance (RON) per Channel — [DATA_NEEDED: Ron typical value]
Operating Voltage Range (Vbb) — 5 V to 36 V
Load Dump Tolerance — Up to 45 V
Standby Current — [DATA_NEEDED: Iq standby typical]
Input Logic Levels — CMOS/TTL compatible, parallel interface
Diagnostic Output — Open-drain fault flag, one per channel
Protection Features — Overload, short-circuit, over-temperature, over-voltage, ESD
PWM Capability — Up to 1 kHz
熱阻,接面至環境 — [DATA_NEEDED: theta_JA value]
MSL 等級 — [DATA_NEEDED: MSL rating]
RoHS 狀態 — Compliant

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