CY14V104LA vs CY14V104LA-BA25XI 比較
詳細並排比較 CY14V104LA 由 Infineon 與 CY14V104LA-BA25XI 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | CY14V104LA | CY14V104LA-BA25XI |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Density | 4 Mbit (512 K x 8 / 256 K x 16) | — |
| 記憶體類型 | Non-Volatile SRAM (nvSRAM) | nvSRAM (Non-Volatile SRAM) |
| Operating Voltage | 3.3 V (3.0 V min, 3.6 V max) | — |
| Access Time | 25 ns (BA25) or 45 ns (BA45) | 25 ns |
| 介面 | Parallel (asynchronous SRAM-compatible) | Parallel |
| Bus Width | x8 / x16 selectable (BYTE pin) | — |
| 封裝 | 48-FBGA (6 x 10 x 1.20 mm) | 48-FBGA (6 x 10 mm, 1.20 mm height) |
| 工作溫度 | -40 C to +85 C (industrial) | -40C to +85C |
| STORE Time (typical) | [DATA_NEEDED: STORE time in ms] | — |
| RECALL Time (typical) | [DATA_NEEDED: RECALL time in ms] | — |
| Active Supply Current (Icc) | [DATA_NEEDED: Icc active mA] | — |
| Standby Current (Isb) | [DATA_NEEDED: Isb uA] | — |
| Hardware STORE Pin | HSB (active low) | — |
| Auto STORE on VCC Drop | Yes (integrated VCc monitor) | — |
| Read/Write Endurance | Unlimited (SRAM side) | — |
| Data Retention | [DATA_NEEDED: retention years] | 20 years |
| RoHS 狀態 | Compliant | Compliant |
| 安裝類型 | Surface Mount | Surface Mount |
| 記憶體容量 | — | 4 Mbit |
| 組織 | — | 512K x 8 / 256K x 16 |
| 供應電壓 | — | 3 V (typical 3.3 V) |
| STORE Cycle Endurance | — | 1,000,000 cycles minimum |
| SRAM Read/Write Endurance | — | Unlimited (infinite SRAM cycles) |
| Address Bus (x8 mode) | — | A0 to A18 |
| Address Bus (x16 mode) | — | A0 to A17 with BHE/BLE byte enables |
| Non-Volatile Functions | — | Automatic STORE on power-down, RECALL on power-up, software STORE/RECALL, HSB pin |
| Grade | — | Industrial |