EP1M120F484C7ES vs EP1M120F484C8ES 比較

詳細並排比較 EP1M120F484C7ES 由 Intel 與 EP1M120F484C8ES 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Intel
EP1M120F484C7ES EP1M120F484C7ES - 120K LE Mercury FPGA, 484-FBGA | Intel

EP1M120F484C7ES - 120K LE Mercury FPGA, 484-FBGA | Intel

EP1M120F484C7ES ✓ 啟用中

規格比較

參數 EP1M120F484C7ES EP1M120F484C8ES
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 Obsolete
Family Mercury (EP1M) ACEX 1M
Logic Elements 120,000 —
Logic Cells / LABs 49,152 logic cells / 4,800 LABs —
User I/O Pins 303 303
封裝 484-ball FCBGA / FineLine BGA 484-ball FineLine BGA
安裝類型 Surface Mount (BGA) Surface Mount (BGA)
Speed Grade C7 C8 (-8 speed bin)
Operating Temperature Grade ES (engineering sample / extended screen) —
Integrated Transceivers Yes - high-speed differential with CDR —
Configuration Method SRAM-based, volatile (requires config device) SRAM bitstream, JTAG/serial
On-chip Memory Block RAM + distributed RAM (consult Mercury datasheet for total bits) —
DSP Blocks Hardware multiplier/accumulator blocks (consult Mercury datasheet for count) —
RoHS 狀態 Compliant [DATA_NEEDED]
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL level from manufacturer datasheet] —
Manufacturer — Intel (formerly Altera)
Logic Elements / Gates — 120,000 (120K gates)
Embedded Logic Cells (EABs) — 4,800
Sample Grade — ES (Engineering Sample)
Process Technology — 0.18 µm CMOS, SRAM-based
Embedded RAM — ~104 Kbits across 12 RAM blocks
PLLs — 4 enhanced PLLs
I/O Standards — LVTTL, LVCMOS, True-LVDS, PCI
Operating Voltage (Core) — [DATA_NEEDED: core VCC range]
MultiVolt I/O Support — 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant
工作溫度 — [DATA_NEEDED: industrial/commercial grade temp range]

資料表與資源

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