EP1S30F780C6 vs EP1S30F780C8N 比較
詳細並排比較 EP1S30F780C6 由 Altera 與 EP1S30F780C8N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP1S30F780C6 | EP1S30F780C8N |
|---|---|---|
| 品牌 | Altera | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | Obsolete | 最後購買 |
| Series | Stratix (1st Generation) | Stratix (EP1S) |
| Family | Stratix | Stratix |
| Logic Elements (LEs) | 32,470 | 32,470 |
| Logic Array Blocks (LABs) | 3,247 | — |
| Maximum User I/Os | 597 | — |
| Process Technology | 0.13 μm all-layer copper SRAM | 130 nm CMOS |
| Core Voltage | 1.5 V | — |
| DSP Blocks | Up to 28 | — |
| Embedded Multipliers | Up to 224 (9-bit × 9-bit) | — |
| On-chip Memory | TriMatrix (M512, M4K, M-RAM blocks) | — |
| 封裝 | 780-ball FCBGA (FineLine BGA), 29 mm × 29 mm, 1 mm pitch | 780-ball FC-FBGA (FineLine BGA), 29 × 29 mm, 1 mm pitch |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0 °C to 85 °C (commercial) | 0 °C to +85 °C (Commercial) |
| Configuration | SRAM-based (passive serial, fast passive parallel, JTAG) | SRAM-based, JTAG / Passive Serial / Passive Parallel |
| Speed Grade | C6 (commercial, speed grade 6) | C8 (-8, faster bin) |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per distributor listings) |
| Embedded Memory (RAM bits) | — | 3,317,184 |
| Total Memory Bits | — | 3,317,184 |
| User I/Os | — | 597 |
| LABs (Logic Array Blocks) | — | 3,247 |
| Supply Voltage (Core) | — | 1.5 V |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |