EP2A40B724C8ES vs EP2A40B724C7 比較
詳細並排比較 EP2A40B724C8ES 由 Intel 與 EP2A40B724C7 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP2A40B724C8ES | EP2A40B724C7 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | Obsolete | Obsolete |
| Series | APEX II (EP2A) | — |
| Family | Field Programmable Gate Array (FPGA) | APEX II |
| Logic Elements / Cells | 38,400 | 38,400 |
| Number of Gates (typical) | 655,360 | — |
| Number of I/O | 540 | — |
| 封裝 | 724-BBGA / FCBGA | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 (C8) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0 °C to +85 °C (commercial) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| MSL 等級 | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| 供應電壓 | [DATA_NEEDED: VCCINT / VCCIO core and I/O voltages] | — |
| Process Node | [DATA_NEEDED: CMOS process technology] | — |
| Embedded Memory | Embedded System Blocks (ESB) | — |
| Programmable Logic Type | SRAM-based, in-system reconfigurable | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| Architecture | MultiCore interconnect with LABs and ESBs | — |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Process Technology | — | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |