EP3SE80F780C4N vs EP3SE50F780C4N 比較

詳細並排比較 EP3SE80F780C4N 由 Intel 與 EP3SE50F780C4N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SE80F780C4N EP3SE50F780C4N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 NRND
Device Family Stratix III E —
Logic Elements 80,000 —
Logic Array Blocks (LABs) 3,200 —
User I/Os 488 —
Embedded Memory (bits) 6,843,392 —
Process Technology 65 nm —
Core Voltage 0.9 V —
I/O Voltage 1.1 V —
封裝 780-ball FC-FBGA (FineLine BGA) 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch
Pin/Package Code F780 —
Speed Grade C4 (commercial) —
Internal Frequency (max) [DATA_NEEDED: internal max frequency per datasheet] —
工作溫度 0 C to 85 C (commercial) 0C to +85C (C4 commercial grade)
安裝類型 Surface Mount Surface Mount (BGA)
Configuration Method Serial/Parallel (Quartus II) —
RoHS 狀態 Compliant Lead-free / RoHS compliant
MSL 等級 [DATA_NEEDED: MSL rating] 3 (per JEDEC J-STD-020, FBGA package)
Family — Stratix III E
Logic Elements (LE) — 47,500
Embedded Memory Bits — 5,760,000
Embedded Memory (M9K/M144K blocks) — 488 (per family datasheet)
Number of LABs — 1900
Maximum User I/Os — 488
DSP Blocks (18x18 multipliers) — 432
PLLs — 12 (per family datasheet)
Maximum Operating Frequency — 717 MHz
Transceiver Channels — Up to 12 (per family, model-dependent)
Transceiver Data Rate — Up to 6.375 Gbps (per Stratix III E family)
Process Node — 40 nm
供應電壓 — Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail)
Configuration Modes — JTAG, Passive Serial, Fast Passive Parallel
Hard Memory Controller — DDR2/DDR3 SDRAM (per Stratix III E family)

資料表與資源

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