H5AN4G6NBJR-UHC vs H5AN4G6NBJR-PBC 比較

詳細並排比較 H5AN4G6NBJR-UHC 由 SK hynix 與 H5AN4G6NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 啟用中
SK hynix
H5AN4G6NBJR-PBC H5AN4G6NBJR-PBC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK hynix

H5AN4G6NBJR-PBC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK hynix

H5AN4G6NBJR-PBC ✓ 啟用中

規格比較

參數 H5AN4G6NBJR-UHC H5AN4G6NBJR-PBC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 4 Gbit —
組織 256M x 16 256M x 16 (268435456 words x 16 bits)
Clock Frequency 1.6 GHz —
Supply Voltage (VDD) 1.14 V to 1.26 V 1.2 V
Technology CMOS —
工作溫度 -40C to +95C [DATA_NEEDED: temperature range for -C grade]
封裝 FBGA-96 (PBGA-96) FBGA-96 (PBGA96), rectangular
安裝類型 Surface Mount Surface Mount
Self Refresh Auto self-refresh —
Data Mask Function Yes (DM) —
Asynchronous Reset Yes (RESET_n) —
On-Die Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes (command/address CRC) —
RoHS 狀態 Compliant —
Memory Density — 4 Gbit
介面 — DDR4 (double data rate, synchronous)
Package Code — TFBGA
Number of Terminals — 96
功能特色 — Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC
Data Rate / Speed Grade — [DATA_NEEDED: speed grade PBC data rate]
CAS 延遲 — [DATA_NEEDED: CAS latency for PBC speed grade]
Process — CMOS
Lead-Free / Halogen-Free — Yes (per family datasheet, Lead-Free & Halogen-Free)
Temperature Grade — OTHER (per distributor listing)

資料表與資源

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