H5ANAG4NBJR-RDC vs MT40A1G8AG-062E 比較
詳細並排比較 H5ANAG4NBJR-RDC 由 SK hynix 與 MT40A1G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG4NBJR-RDC | MT40A1G8AG-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | — |
| 組織 | 4G x 4 | 1G x 8 |
| Supply Voltage VDD | 1.2 V | — |
| 資料速率 | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) | — |
| 封裝 | 78-ball FBGA | 78-FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Prefetch | 16n (bank group architecture) | — |
| 介面 | SSTL-12 | Parallel |
| 功能特色 | Bank groups, CA parity, data CRC, ODT, DLL-off mode | — |
| Refresh | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] | — |
| Operating Temperature (case) | -40C to +85C (industrial; extended to 95C per datasheet conditions) | — |
| Temperature Grade Suffix | RDC - industrial temperature, lead-free, halogen-free | — |
| RoHS 狀態 | Compliant (lead-free / halogen-free per RDC suffix) | [DATA_NEEDED: RoHS status] |
| VDDQ | 1.2 V | — |
| Product Family | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series | — |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |