H5ANAG4NBJR-UHC vs H5ANAG4NBJR-VKC 比較

詳細並排比較 H5ANAG4NBJR-UHC 由 SK hynix 與 H5ANAG4NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG4NBJR-UHC H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC ✓ 啟用中
SK hynix
H5ANAG4NBJR-VKC H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC ✓ 啟用中

規格比較

參數 H5ANAG4NBJR-UHC H5ANAG4NBJR-VKC
品牌 SK hynix SK hynix
類別 DRAM DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM —
Density 4 Gbit 16 Gb
組織 256M x16 —
Supply Voltage (VDD) 1.14 V to 1.26 V (nominal 1.2 V) —
Clock / Data Rate 1.6 GHz —
封裝 FBGA-96 (PBGA96) FBGA-78 (7.5 mm x 11 mm)
工作溫度 -40C to +95C —
介面 CMOS, DDR4 (double data rate) —
Data Mask (DM) Yes —
Asynchronous Reset Yes Yes
On-Die Termination (ODT) Dynamic ODT —
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes —
Auto Self-Refresh Yes Yes
安裝類型 Surface Mount (BGA) Surface Mount (BGA)
RoHS 狀態 Compliant Compliant (per distributor listing)
CAS 延遲 [DATA_NEEDED: CAS Latency / speed bin detail] —
Product Type — DDR4 SDRAM
工作溫度範圍 — -40 C to +95 C (case, industrial with auto self-refresh)
Speed Grade — VKC (commercial speed bin - see SK hynix part number decoder)
資料速率 — [DATA_NEEDED: data rate (MT/s) for -VKC bin]
VDD Supply Voltage — [DATA_NEEDED: VDD supply voltage]
VDDQ Supply Voltage — [DATA_NEEDED: VDDQ supply voltage]
Data Mask Function — Yes
Dynamic ODT — Yes
CRC / CA Parity — Yes
Lead-Free — [DATA_NEEDED: lead-free status]
無鹵素 — [DATA_NEEDED: halogen-free status]

資料表與資源

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