H5ANAG8NBJR-VKC vs H5ANAG4NBJR-VKC 比較

詳細並排比較 H5ANAG8NBJR-VKC 由 SK hynix 與 H5ANAG4NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG8NBJR-VKC H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix

H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix

H5ANAG8NBJR-VKC ✓ 啟用中
SK hynix
H5ANAG4NBJR-VKC H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC ✓ 啟用中

規格比較

參數 H5ANAG8NBJR-VKC H5ANAG4NBJR-VKC
品牌 SK hynix SK hynix
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM —
Density 16 Gbit 16 Gb
組織 2G x 8 —
Speed Grade DDR4-2666 (2666 Mbps/pin) VKC (commercial speed bin - see SK hynix part number decoder)
供應電壓 1.14 V to 1.26 V (VDDQ) —
Clock Frequency 1.6 GHz (internal interface per distributor data) —
工作溫度 0C to +85C —
封裝 FBGA-78 FBGA-78 (7.5 mm x 11 mm)
安裝類型 Surface Mount Surface Mount (BGA)
Standby Current 30 mA (operating, per distributor listing) —
Auto Self-Refresh Yes Yes
Data Mask Function Yes Yes
Dynamic On-Chip Termination Yes —
Asynchronous Reset Yes Yes
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes —
Auto Precharge Yes —
RoHS 狀態 Compliant, Lead-Free and Halogen-Free Compliant (per distributor listing)
Refresh Interval [DATA_NEEDED: tREFI refresh interval] —
Product Type — DDR4 SDRAM
工作溫度範圍 — -40 C to +95 C (case, industrial with auto self-refresh)
資料速率 — [DATA_NEEDED: data rate (MT/s) for -VKC bin]
VDD Supply Voltage — [DATA_NEEDED: VDD supply voltage]
VDDQ Supply Voltage — [DATA_NEEDED: VDDQ supply voltage]
Dynamic ODT — Yes
CRC / CA Parity — Yes
Lead-Free — [DATA_NEEDED: lead-free status]
無鹵素 — [DATA_NEEDED: halogen-free status]

資料表與資源

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