H5CG34MEBDX030 vs H5CG46MEBDX017N 比較
詳細並排比較 H5CG34MEBDX030 由 SK hynix 與 H5CG46MEBDX017N 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5CG34MEBDX030 | H5CG46MEBDX017N |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | SK hynix | — |
| Product Family | H5CG (DDR5 SDRAM) | — |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | [DATA_NEEDED: device density (Gb)] | 16 Gbit |
| 組織 | [DATA_NEEDED: x organization] | 1G x 16 |
| Speed Grade / Data Rate | [DATA_NEEDED: MT/s speed bin] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL value] | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD (typ. 1.1 V class for DDR5)] | — |
| 封裝 | FBGA (fine-pitch BGA), surface mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| On-die ECC | Yes (DDR5 standard feature) | — |
| Burst Length | 16 (DDR5 standard) | — |
| Bank Groups | [DATA_NEEDED: bank group count] | DDR5 architecture (8 bank groups) |
| 介面類型 | Parallel, DDR5 point-to-point | DDR5 (synchronous, double data rate) |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 資料速率 | — | 4800 Mbps/pin |
| Speed Grade | — | DDR5-4800 |
| VDD Supply Voltage | — | 1.1 V |
| VDDQ Supply Voltage | — | 1.1 V |
| Package Type | — | FCBGA (flip-chip ball grid array) |
| On-Die ECC | — | Yes (DDR5 standard feature) |
| Part Family | — | H5CG46 series |
| Manufacturer Status | — | MP (mass production) |