IAUC60N04S6N031HATMA1 vs IAUC60N04S6N044ATMA1 比較
詳細並排比較 IAUC60N04S6N031HATMA1 由 Infineon 與 IAUC60N04S6N044ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ 啟用中規格比較
| 參數 | IAUC60N04S6N031HATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | — |
| 封裝 | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| 工作接面溫度 | — | -55°C to +175°C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |