IAUCN04S7L014ATMA1 vs BSC019N04LSTATMA1 比較
詳細並排比較 IAUCN04S7L014ATMA1 由 Infineon 與 BSC019N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN04S7L014ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 40V Automotive | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | — |
| On-Resistance RDS(on) Max | 1.43 mΩ | — |
| 閘極臨界電壓 | [DATA_NEEDED: Gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total gate charge Qg] | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Power dissipation Pd] | — |
| 工作溫度範圍 | -55°C to +175°C (typical automotive MOSFET range) | -55 C to +150 C |
| 封裝 | PG-TDSON-8-34 (TDSON EP, 8-pin) | TDSON-8 (SuperSO8) 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Configuration | Single N-Channel MOSFET | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |