IAUT300N08S5N011ATMA1 vs ISC0703NLSATMA1 比較

詳細並排比較 IAUT300N08S5N011ATMA1 由 Infineon 與 ISC0703NLSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ 啟用中
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 ✓ 啟用中

規格比較

參數 IAUT300N08S5N011ATMA1 ISC0703NLSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) Trench MOSFET (OptiMOS family)
Drain-Source Voltage (V_DS) 80 V —
Continuous Drain Current (I_D, T_C=25C) 300 A —
Pulsed Drain Current (I_DM) 410 A (Tj) —
R_DS(on) max 1.10 mOhm at V_GS=10 V —
Gate Threshold Voltage (V_GS(th)) 3.8 V —
Total Gate Charge (Q_g) 231 nC at V_GS=10 V —
Input Capacitance (C_iss) 16.25 nF —
Output Capacitance (C_oss) 2.6 nF —
Reverse Transfer Capacitance (C_rss) 130 pF —
Power Dissipation (P_D) 375 W at T_C=25C —
工作溫度範圍 -55C to +175C -55C to +150C (junction)
封裝 PG-HSOF-8-1 (TOLL 10x12 mm) PG-TDSON-8 (5x6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 [DATA_NEEDED: MSL level]
Qualification Automotive (AEC-Q101) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta=25C — 13 A
Continuous Drain Current (ID) at Tc=25C — 57 A
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
Standard Package Quantity — 5,000 (reel)
RoHS 狀態 — Compliant
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

資料表與資源

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