IGB10N60TATMA1 vs IKD15N60RFATMA1 比較

詳細並排比較 IGB10N60TATMA1 由 Infineon 與 IKD15N60RFATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IGB10N60TATMA1 IGB10N60TATMA1 - 600V 20A TRENCHSTOP IGBT | Infineon

IGB10N60TATMA1 - 600V 20A TRENCHSTOP IGBT | Infineon

IGB10N60TATMA1 ✓ 啟用中
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ 啟用中

規格比較

參數 IGB10N60TATMA1 IKD15N60RFATMA1
品牌 Infineon Infineon
類別 IGBTs IGBTs
生命週期狀態 啟用中 啟用中
Collector-Emitter Voltage (Vces) 600 V —
Continuous Collector Current (IC) at TC=25C 20 A —
Continuous Collector Current (IC) at TC=100C [DATA_NEEDED: IC at TC=100C] —
Maximum Power Dissipation (Ptot) 110 W 250 W
Gate-Emitter Voltage (VGES) [DATA_NEEDED: VGES max] +/-20 V
Technology TRENCHSTOP IGBT3 with Fieldstop layer TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
封裝 PG-TO263-3-2 (D2Pak, TO-263AB) PG-TO252-3 (DPAK), 3 pins (2 + tab)
安裝類型 Surface Mount Surface Mount
Configuration Single discrete IGBT —
工作溫度範圍 -40C to +175C —
Storage Temperature Range -55C to +175C —
Soldering Temperature (reflow) [DATA_NEEDED: reflow profile] —
MSL 等級 1 —
RoHS 狀態 Compliant —
Lead-Free Yes —
腳位數 3 (Gate, Collector, Emitter) —
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
工作接面溫度 — -40C to +175C
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

資料表與資源

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