IPB020N08N5ATMA1 vs BSC009NE2LS5IATMA1 比較

詳細並排比較 IPB020N08N5ATMA1 由 Infineon 與 BSC009NE2LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ 啟用中

規格比較

參數 IPB020N08N5ATMA1 BSC009NE2LS5IATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ 5 (25V/30V family)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) 480 A —
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (PD) at Tc=25C 300 W —
工作接面溫度 -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
封裝 PG-TO263-3 (D2PAK-2) PG-TDSON-8-7 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) Single with built-in diode
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Manufacturer Part Number — BSC009NE2LS5IATMA1
Manufacturer — Infineon Technologies
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) max — 25 V
Gate-Source Voltage (V_GS) max — 20 V
Gate-Threshold Voltage V_GS(th) typ — 1.7 V (range 1.0-2.0 V)
R_DS(on) max @ V_GS=10V — 0.95 mΩ
Continuous Drain Current (I_D) @ T_A=25°C — 40 A
Continuous Drain Current (I_D) @ T_C=25°C — 217 A (pulsed, datasheet rating)
Power Dissipation (P_D) @ T_A — 2.5 W
Power Dissipation (P_D) @ T_C — 74 W
Total Gate Charge (Q_G) typ — 23 nC @ V_GS=0-4.5V
Input Capacitance (C_iss) typ — 3200 pF
工作溫度範圍 — -55°C to +150°C
Terminal Finish — Matte Tin (e3 per JESD-609)
Number of Terminals — 8

資料表與資源

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