IPB081N06L3GATMA1 vs IPB021N10NM5LF2ATMA1 比較

詳細並排比較 IPB081N06L3GATMA1 由 Infineon 與 IPB021N10NM5LF2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 啟用中

規格比較

參數 IPB081N06L3GATMA1 IPB021N10NM5LF2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
電晶體類型 N-Channel MOSFET —
封裝 PG-TO263-3 (D2PAK) PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max —
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
工作溫度範圍 -55 C to +175 C (junction) -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range]
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
RoHS 狀態 Compliant Compliant
MSL 等級 1 (unlimited) [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Part Family — OptiMOS 5 Linear FET 2
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25°C — 176 A
Continuous Drain Current (I_D) at T_A=25°C — 30 A
R_DS(on) Maximum — 2.1 mΩ
Gate-Source Voltage (V_GS) Maximum — ±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25°C — 375 W
Power Dissipation (P_D) at T_A=25°C — 3.8 W
Drive Voltage (Max R_DS(on), Min R_DS(on)) — 10 V, 15 V

資料表與資源

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