IPB081N06L3GATMA1 vs IPD031N03LGATMA1 比較
詳細並排比較 IPB081N06L3GATMA1 由 Infineon 與 IPD031N03LGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB081N06L3GATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO252-3-11 (DPAK-2) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | — |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | — |
| 工作溫度範圍 | -55 C to +175 C (junction) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | — |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | MOSFET (Metal Oxide), OptiMOS 3 |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | 1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ 25 °C | — | 90 A (Tc) |
| Power Dissipation (Pd) | — | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | — | 3.1 mΩ |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | — | Ultra low (per datasheet tagline) |
| 工作溫度 | — | -55 °C to +175 °C (junction) |
| Mounting Tab | — | Drain (electrically connected) |
| Avalanche Energy Rated | — | Yes (per OptiMOS 3 datasheet family) |