IPD30N06S215ATMA2 vs BTS441RGATMA1 比較

詳細並排比較 IPD30N06S215ATMA2 由 Infineon 與 BTS441RGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 ✓ 啟用中
Infineon
BTS441RGATMA1 BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 ✓ 啟用中

規格比較

參數 IPD30N06S215ATMA2 BTS441RGATMA1
品牌 Infineon Infineon
類別 MOSFETs Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies AG
Part Family OptiMOS Power MOSFET —
電晶體類型 N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID, Tc) 30 A —
Power Dissipation (PD, Tc) 136 W —
封裝 / 外殼 PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) —
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +175 C (junction) —
Automotive Qualification AEC-Q101 qualified —
MSL 等級 MSL1 (up to 260 C peak reflow) —
Avalanche Tested 100% avalanche tested —
Lead-Free / RoHS Green package (lead free), RoHS compliant —
Gate Threshold Type Logic-level compatible —
Packing Tape & Reel (T/R) —
Part Number — BTS441RGATMA1
Switch Type — 1:1 N-Channel High-Side
輸出數量 — 1
Continuous Load Current — 17 A
拓撲 — Smart High-Side Switch
Input Type — CMOS-compatible, ground referenced
Diagnostics — Yes (fault feedback)
Technology — Smart SIPMOS (N-channel vertical FET + charge pump)
封裝 — PG-TO263-5-2 (TO-263-5)
腳位數 — 5
Operating Voltage Range — [DATA_NEEDED: Vbb range, e.g. 6V-42V]
On-State Resistance (Rds(on)) — [DATA_NEEDED: Rds(on) at 25 C]
Over-Current Protection — Yes (integrated)
Thermal Protection — Yes (overtemperature shutdown)
Over-Voltage Protection — Yes (inductive load clamping)
Automotive Qualified — Yes (AEC-Q100 automotive grade)
RoHS 狀態 — Compliant
Tape and Reel Quantity — 1000 (per reel)

資料表與資源

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