IPD90N03S4L02ATMA1 vs IPD090N03LGATMA1 比較

詳細並排比較 IPD90N03S4L02ATMA1 由 Infineon 與 IPD090N03LGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ 啟用中

規格比較

參數 IPD90N03S4L02ATMA1 IPD090N03LGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench —
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 90 A —
Power Dissipation (PD) at Tc 136 W —
RDS(on) Max at VGS=10 V 2.2 mΩ —
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] —
Gate Drive Voltage (VGS) 4.5 V to 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] —
工作接面溫度 -55°C to +175°C —
Avalanche Rated 100% Avalanche tested —
封裝 PG-TO252-3-11 (DPAK, surface mount) PG-TO252-3-11 (DPAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (unlimited)
RoHS 狀態 Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified —
Series OptiMOS-T2 —
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 40 A
Continuous Drain Current (Id) @ Tc=100C — [DATA_NEEDED: Id at 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Id]
Maximum Power Dissipation (Pd) @ Tc=25C — 42 W
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A — 9 mOhm (typical)
On-State Resistance (Rds(on)) @ Vgs=4.5V — [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
工作溫度範圍 — -55C to +175C (junction)
Technology Family — OptiMOS 30V
Configuration — Single

資料表與資源

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