IPG20N06S2L65AATMA1 vs BSC027N06LS5ATMA1 比較
詳細並排比較 IPG20N06S2L65AATMA1 由 Infineon 與 BSC027N06LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N06S2L65AATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS™ 5 |
| FET Type | Dual N-Channel (Half Bridge / Independent) | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | MOSFET (Metal Oxide) |
| 封裝 | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL 等級 | MSL1 (peak reflow 260 C) | — |
| RoHS 狀態 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| 工作溫度範圍 | — | -55°C to +150°C |
| 封裝 / 外殼 | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| 腳位數 | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |