IPG20N06S4L14AATMA1 vs IPD33CN10NGATMA1 比較

詳細並排比較 IPG20N06S4L14AATMA1 由 Infineon 與 IPD33CN10NGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 啟用中

規格比較

參數 IPG20N06S4L14AATMA1 IPD33CN10NGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IPG20N06S4L14AATMA1 —
FET Type 2 N-Channel (Dual) N-Channel
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
工作溫度範圍 -55°C to +175°C (junction) -55C to +175C (TJ)
封裝 PG-TDSON-8-10 (Wettable Flank) PG-TO252-3 (DPAK), Surface Mount
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) —
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench OptiMOS (Trench)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 27 A
Power Dissipation (PD, Tc) — 58 W
腳位數 — 3 (Gate, Drain, Source)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
RoHS 狀態 — Compliant
Lead-Free — Yes
MSL 等級 — 1

資料表與資源

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