IPG20N10S4L22AATMA1 vs BSC019N04LSTATMA1 比較
詳細並排比較 IPG20N10S4L22AATMA1 由 Infineon 與 BSC019N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N10S4L22AATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | TDSON-8 (SuperSO8) 5x6 mm |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS T2 | OptiMOS 5 (N-channel trench MOSFET) |
| 工作溫度 | -55°C to +175°C | — |
| RoHS 狀態 | Compliant | Compliant |
| Channel Count | 2 (dual independent) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| 工作溫度範圍 | — | -55 C to +150 C |
| MSL 等級 | — | 1 (unlimited) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |