IPP100N12S305AKSA2 vs IHW40N120R5XKSA1 比較

詳細並排比較 IPP100N12S305AKSA2 由 Infineon 與 IHW40N120R5XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 啟用中

規格比較

參數 IPP100N12S305AKSA2 IHW40N120R5XKSA1
品牌 Infineon Infineon
類別 MOSFETs IGBTs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
工作溫度範圍 -55C to +175C (TJ) —
封裝 PG-TO220-3-1 (Through Hole) TO-247-3 (PG-TO247-3) through-hole
安裝類型 Through Hole Through Hole
腳位數 3 (Gate, Drain, Source) —
RoHS 狀態 Compliant —
MSL 等級 N/A (Through Hole) N/A (through-hole)
Avalanche Energy Rated Yes (single-pulse) —
Collector-Emitter Voltage (VCE) — 1200 V
Continuous Collector Current (IC, TC=25C) — 80 A
Pulsed Collector Current (ICM) — 160 A
Maximum Power Dissipation (Ptot) — 394 W
Gate-Emitter Voltage (VGE) — +/-20 V
VCE(sat) at IC=40A, VGE=15V, Tj=25C — [DATA_NEEDED: typical VCE(sat) value]
Integrated Anti-Parallel Diode — Yes (monolithic reverse-conducting)
Technology — Trench Field Stop, Reverse-Conducting RC-H5
工作接面溫度 — -40C to +175C
Storage Temperature — -55C to +150C
Soldering Temperature (max 10s) — 260 C
Switching Application — Resonant / soft switching (induction cooking optimized)
RoHS Compliance — Compliant
無鹵素 — Yes

資料表與資源

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