IPT017N12NM6ATMA1 vs BSC12DN20NS3GATMA1 比較
詳細並排比較 IPT017N12NM6ATMA1 由 Infineon 與 BSC12DN20NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 啟用中規格比較
| 參數 | IPT017N12NM6ATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS power MOSFET |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| 封裝 | PG-HSOF-8 (TOLL) | PG-TDSON-8-5 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C | — |
| 腳位數 | 8 + tab | 8 |
| Packaging | Tape & Reel | — |
| RoHS 狀態 | Compliant | Compliant |
| Product Family | — | OptiMOS 200V |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel |