IPW60R037P7XKSA1 vs IPL60R125P7AUMA1 比較
詳細並排比較 IPW60R037P7XKSA1 由 Infineon 與 IPL60R125P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R037P7XKSA1 | IPL60R125P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | — |
| 電晶體類型 | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| 封裝 | PG-TO247-3 (TO-247-3, through-hole) | ThinPAK 8x8 (4-pin + exposed pad) |
| 安裝類型 | Through Hole | Surface Mount |
| 工作接面溫度 | -55 °C to +150 °C | -55 C to +150 C |
| Technology | CoolMOS Superjunction (SJ) | Superjunction (SJ) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Product Family | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25C) | — | 27 A |
| On-State Resistance RDS(on) max | — | 125 mOhm |
| Gate Charge (Qg, typ) | — | 36 nC |
| Total Gate Charge Qg (typ) | — | 36 nC |
| Output Capacitance Coss (typ) | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr] |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf] |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage VGS(th), typ | — | 3.5 V |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |
| 濕度敏感等級 (MSL) | — | MSL 2 (per JEDEC J-STD-020) |
| Pin Configuration | — | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 |