IQD009N06NM5ATMA1 vs IAUCN08S7L033ATMA1 比較
詳細並排比較 IQD009N06NM5ATMA1 由 Infineon 與 IAUCN08S7L033ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQD009N06NM5ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (Ta) | 42 A | — |
| Continuous Drain Current (Tc) | 445 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| RDS(on) Maximum | 0.9 mΩ @ VGS = 10 V | — |
| 封裝 | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | OptiMOS 7 trench MOSFET |
| 工作溫度 | -55 °C to +175 °C | — |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| 工作溫度範圍 | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |