IQD020N10NM5CGSCATMA1 vs IQE050N08NM5CGATMA1 比較
詳細並排比較 IQD020N10NM5CGSCATMA1 由 Infineon 與 IQE050N08NM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQD020N10NM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 100V (IQD series) | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Continuous Drain Current (ID, Tc) | 276 A | — |
| Continuous Drain Current (ID, Ta) | 26 A | — |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | — |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | — |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | — |
| Input Capacitance (Ciss) | 7.3 nF | — |
| Output Capacitance (Coss) | 1 nF | — |
| Reverse Transfer Capacitance (Crss) | 42 pF | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-TTFN-9-1 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作溫度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |