IQDH29NE2LM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 比較
詳細並排比較 IQDH29NE2LM5CGSCATMA1 由 Infineon 與 IQD020N10NM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQDH29NE2LM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| 封裝 | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| 腳位數 | 9 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| 工作接面溫度 | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |