IR2104STRPBF vs IR21271STRPBF 比較

詳細並排比較 IR2104STRPBF 由 Infineon 與 IR21271STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2104STRPBF IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF ✓ 啟用中

規格比較

參數 IR2104STRPBF IR21271STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels High-Side or Low-Side
輸出數量 2 (high-side + low-side) 1
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic —
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes Yes
Negative VS Transient Tolerance Yes —
工作溫度範圍 -40 C to +150 C —
封裝 8-SOIC (SOIC-8) 8-SOIC (3.90 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Input Polarity — Non-Inverting
Supply Voltage (VCC) — 9 V to 20 V
High-Side Offset Voltage — 600 V max
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns typical
上升時間 — [DATA_NEEDED: rise time]
下降時間 — [DATA_NEEDED: fall time]
工作溫度 — -40C to +125C
Lead-Free / RoHS — Yes (Pb-Free, suffix PBF)
Integrated Current Sense — Yes (CS pin + shutdown)
Negative Transient Tolerance — Yes (high-side rail)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價