IRF1018EPBF vs IPB110P06LMATMA1 比較
詳細並排比較 IRF1018EPBF 由 Infineon 與 IPB110P06LMATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1018EPBF | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $0.38 | — |
| FET Type | N-Channel | P-Channel |
| Technology | HEXFET (Power MOSFET) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 79 A | — |
| Rds(on) max at Vgs=10V | 8.4 mOhm | — |
| Total Gate Charge (Qg) | 46 nC | — |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | — |
| Power Dissipation (Pd) at Tc=25C | 110 W | — |
| 工作溫度範圍 | -55 C to +175 C (Tj) | -55 C to +175 C (TJ) |
| 封裝 | TO-220AB (through-hole, 3-lead) | — |
| 安裝類型 | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |