IRF1407PBF vs IRFB4310PBF 比較

詳細並排比較 IRF1407PBF 由 Infineon 與 IRFB4310PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF1407PBF IRFB4310PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
工作溫度範圍 -55 C to +175 C -55C to +175C (junction)
封裝 TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
安裝類型 Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 130 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max at VGS=10V — 7 mOhm
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) — 170 nC
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
RoHS 狀態 — Compliant
Lead-Free — Yes (Pb-free PBF suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價