IRF2907ZSTRLPBF vs IPB90N06S4L04ATMA2 比較

詳細並排比較 IRF2907ZSTRLPBF 由 Infineon 與 IPB90N06S4L04ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ 啟用中

規格比較

參數 IRF2907ZSTRLPBF IPB90N06S4L04ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
連續汲極電流 (TC=25°C) 170 A —
連續汲極電流 (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
工作接面溫度 -55 C to +175 C —
Technology IR HEXFET / IR MOSFET OptiMOS T2, N-channel enhancement mode
封裝 D2PAK (TO-263AB) surface mount PG-TO263-3-2 (D2PAK)
腳位數 3 (Gate, Drain, Source) —
安裝類型 Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
RoHS 狀態 Compliant —
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Manufacturer — Infineon Technologies
Part Number — IPB90N06S4L04ATMA2
Drain-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D, Tc) — 90 A
Pulsed Drain Current (I_D,pulse) — 360 A
Power Dissipation (P_D, Tc) — 150 W
On-State Resistance R_DS(on) (typ @ VGS=10V) — 3.4 mΩ
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th)]
Gate-Source Voltage (V_GS) — ±20 V
工作溫度範圍 — -55 °C to +175 °C
MSL 等級 — MSL1 (unlimited floor life)
Peak Reflow Temperature — 260 °C
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Tested — 100% avalanche-tested
RoHS / Halogen-Free — Yes (Green Product)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價