IRF3007STRLPBF vs IRFB3207ZPBF 比較

詳細並排比較 IRF3007STRLPBF 由 Infineon 與 IRFB3207ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF3007STRLPBF IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF ✓ 啟用中

規格比較

參數 IRF3007STRLPBF IRFB3207ZPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical —
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
工作接面溫度 -55°C to +175°C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
安裝類型 Surface Mount Through Hole
RoHS 狀態 Compliant (Lead-Free, PBF suffix) —
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) Yes (improved Z-variant ruggedness)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Technology — N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
封裝 — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 等級 — N/A (through-hole)

資料表與資源

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