IRF4905PBF vs TJ30S06M3L(T6L1 比較
詳細並排比較 IRF4905PBF 由 Infineon 與 TJ30S06M3L(T6L1 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF4905PBF | TJ30S06M3L(T6L1 |
|---|---|---|
| 品牌 | Infineon | Toshiba |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Technology | HEXFET (IR MOSFET) | U-MOS (Silicon P-Channel MOS) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | — |
| 工作溫度範圍 | -55 °C to +175 °C (junction) | -55°C to +175°C (Tj) |
| 封裝 | TO-220AB (through-hole) | DPAK+ (TO-252-3) |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| 安裝類型 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| MSL 等級 | 1 (not moisture-sensitive for TO-220) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | -30 A |
| Power Dissipation (PD) @ Tc=25°C | — | 68 W |
| RDS(ON) Max @ VGS=-10 V | — | 21.8 mΩ |
| RDS(ON) Typ @ VGS=-10 V | — | 16.8 mΩ |
| Gate Threshold Voltage (Vth) | — | -3.0 V (typ) @ VDS=-1 mA |
| Drain Leakage (IDSS) Max | — | -10 µA @ VDS=-60 V |
| Input Capacitance (Ciss) | — | 3950 pF |
| Automotive Qualification | — | AEC-Q101 |