IRF4905SPBF vs BSZ15DC02KDHXTMA1 比較

詳細並排比較 IRF4905SPBF 由 Infineon 與 BSZ15DC02KDHXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ 啟用中

規格比較

參數 IRF4905SPBF BSZ15DC02KDHXTMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID, Tc=25C) -42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V —
Power Dissipation (PD, Tc=25C) 170 W —
工作接面溫度 -55 C to +150 C -55 C to +175 C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
封裝 D2PAK (TO-263) surface mount PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
Technology HEXFET, planar cell OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 狀態 Compliant (PBF suffix indicates Pb-free) —
Qualification JEDEC standard —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
電晶體類型 — N-Channel + P-Channel (complementary pair)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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