IRFB4110PBF vs IRF1010NPBF-VB 比較
詳細並排比較 IRFB4110PBF 由 Infineon 與 IRF1010NPBF-VB 由 VBsemi Elec. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4110PBF | IRF1010NPBF-VB |
|---|---|---|
| 品牌 | Infineon | VBsemi Elec |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $1.55 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | TO-220AB (through-hole) | TO-220AB (Through Hole) |
| Technology | HEXFET (planar DMOS) | — |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant (Pb-free suffix) | Compliant (Pb-free suffix) |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Configuration | — | Single FET |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | — | Below 100 kHz |
| Market Qualification | — | Industrial |