IRFH5015TRPBF vs IRF3007STRLPBF 比較
詳細並排比較 IRFH5015TRPBF 由 Infineon 與 IRF3007STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFH5015TRPBF | IRF3007STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 110 nC typical |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 封裝 | 8-PQFN (5x6) SuperSO8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 工作溫度 | -55C to +150C (TJ max) | — |
| RoHS 狀態 | Compliant | Compliant (Lead-Free, PBF suffix) |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | — | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 62 A |
| Pulsed Drain Current (Idm) | — | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (Pd) | — | 120 W at Tc=25°C |
| 工作接面溫度 | — | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 40 °C/W |
| Package Type | — | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| Avalanche Rated | — | Yes (Repetitive Avalanche Allowed up to Tjmax) |