IRFR3710ZTRLPBF vs IRFR3710ZTRPBF 比較
詳細並排比較 IRFR3710ZTRLPBF 由 Infineon 與 IRFR3710ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3710ZTRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), HEXFET | HEXFET (IR MOSFET) |
| Drain to Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C (Tc) | 42 A | — |
| Max Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=10V | 18 mOhm | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th) typ) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | 69 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| Avalanche Energy Rating (EAS) | 150 mJ | — |
| Maximum Junction Temperature | 175 C | — |
| 封裝 | TO-252AA (DPAK), 3-pin (2+tab) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Lisleapex listing) | — |
| Configuration | Single with built-in diode | — |
| 工作溫度 | -55 C to +175 C (TJ) | — |
| RoHS 狀態 | Compliant (Pb-free PBF suffix) | Compliant |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| 工作接面溫度 | — | -55C to +175C |
| Lead-Free | — | Yes |