IRFR9024NTRLPBF vs IRFR9024NTRPBF 比較

詳細並排比較 IRFR9024NTRLPBF 由 Infineon 與 IRFR9024NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 啟用中
Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 啟用中

規格比較

參數 IRFR9024NTRLPBF IRFR9024NTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) — $0.17
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -11 A —
On-Resistance RDS(on) max at VGS=-10V 175 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Power Dissipation (PD) at TC=25C 38 W —
Gate Charge (Qg) typical 12.7 nC —
Package Type TO-252AA (DPAK) —
安裝類型 Surface Mount Surface Mount
腳位數 3 (Drain, Gate, Source + Tab) 3
Technology HEXFET (Generation 5) HEXFET (Gen 5)
工作溫度範圍 -55C to +175C —
Lead-Free / RoHS Yes (LPBF suffix) —
Reel Orientation Left (TRL suffix) —
VDS (Drain-Source Voltage) — -55 V
Continuous Drain Current (Tc=25C) — -11 A
脈衝汲極電流 — [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Threshold Voltage) — [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V — 175 mOhm
Total Gate Charge (Qg) — 12.7 nC
Maximum Power Dissipation (Tc=25C) — 38 W
工作接面溫度 — -55C to +175C
封裝 — TO-252AA (DPAK)
RoHS 狀態 — Compliant

資料表與資源

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