IRL540NSTRLPBF vs IRFR5305TRLPBF 比較

詳細並排比較 IRL540NSTRLPBF 由 Infineon 與 IRFR5305TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRL540NSTRLPBF IRFR5305TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V ±20 V
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) 49.3 nC —
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
工作溫度範圍 -55°C to +175°C —
封裝 TO-263 (D2PAK) TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) —
RoHS 狀態 Compliant (LPBF suffix indicates lead-free) —
MSL 等級 [DATA_NEEDED: MSL rating] —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
工作接面溫度 — -55C to +175C
Technology — HEXFET fifth-generation planar MOSFET
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

資料表與資源

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